Ultra-thin DVS-BCB adhesive bonding of III-V wafers, dies and multiple dies to a patterned silicon-on-insulator substrate

Heterogeneous integration of III-V semiconductor materials on a silicon-on-insulator (SOI) platform has recently emerged as one of the most promising methods for the fabrication of active photonic devices in silicon photonics. For this integration, it is essential to have a reliable and robust bonding pr ocedure, which a lso pr ovides a u niform a nd u ltra-thin bon ding layer for an effective optical coupling between III-V active layers and SOI waveguides. A new process for bonding of III-V dies to processed siliconon-insulator waveguide circuits using divinylsiloxane-bis-benzocyclobutene (DVS-BCB) was developed u sing a commercial wafer b onder. This “cold bonding” method s ignificantly s implifies t he bon ding preparation f or machine-based bonding both for die and wafer-scale bonding. 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